High-Performance Gan-Based Hemts

hace 1 mes


Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

Puesto: High-performance GaN-based HEMTs Función: Design, modelling, and fabrication of high-performance GaN-based HEMTs: Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures... Master  Idiomas TAREAS/TASKS: Design, modelling, and fabrication of high-performance GaN-based HEMTs: • Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures • Exploration of the integration of 2D materials for enhanced HEMT performance HABILIDADES-CUALIFICACIONES/SKILLS-QUALIFICATIONS:  • MS Office, Latex, Adobe Illustrator, AutoCAD • Previous experience on programming (Python, C, LabVIEW, etc) and scientific (Mathematica, Matlab, Origin, etc) or simulation (COMSOL, etc) software will be highly valued  • Candidates must hold a Master Degree in Electronic/Telecommunication/Materials Engineering or Physics • Proficiency in English • Goal-oriented mindset, creativity, teamwork & communication skills • Previous research experience will be highly valued BENEFICIOS/BENEFITS: • The hired researcher will pursue an industrial PhD in a joint program with INDRA Sistemas S. A., a Spanish multinational company, within the project "Chair UPM-INDRA in Microelectronics". • Health and social benefits according to Spanish law. CRITERIOS Y PROCESO DE SELECCION/ELIGIBILITY CRITERIA AND SELECTION PROCESS: Applicants should send a motivation letter & CV Jorge Pedrós (******)  #J-18808-Ljbffr



  • Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: High-performance GaN-based HEMTs Función: Design, modelling, and fabrication of high-performance GaN-based HEMTs: Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures... Master  Idiomas TAREAS/TASKS: Design, modelling, and fabrication of...


  • Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: High-performance GaN-based HEMTs Función: Design, modelling, and fabrication of high-performance GaN-based HEMTs: Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures...MasterIdiomasTAREAS/TASKS:Design, modelling, and fabrication of high-performance...


  • Madrid, Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: High-performance GaN-based HEMTs Función: Design, modelling, and fabrication of high-performance GaN-based HEMTs: Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structuresMaster Idiomas TAREAS/TASKS:Design, modelling, and fabrication of high-performance...


  • Madrid, Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: High-performance GaN-based HEMTs Función: Design, modelling, and fabrication of high-performance GaN-based HEMTs: Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structuresMasterIdiomasTAREAS/TASKS:Design, modelling, and fabrication of high-performance...


  • Madrid, España Universidad Politécnica De Madrid A tiempo completo

    Función: Design, modelling, and fabrication of high-performance GaN-based HEMTs: Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures...- Empresa: UNIVERSIDAD POLITÉCNICA DE MADRID- Nº de Plazas: 1- Referencia: HRS2024/184- Publicada el 6/5/2024-...


  • Madrid, España UNIVERSIDAD POLITÉCNICA DE MADRID A tiempo completo

    Función: Design, modelling, and fabrication of high-performance GaN-based HEMTs: Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures... - Empresa: UNIVERSIDAD POLITÉCNICA DE MADRID - Nº de Plazas: 1 - Referencia: HRS2024/184 - Publicada el 6/5/2024 -...


  • Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: Advanced packaging of GaN-based HEMTs Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and hig Master  Idiomas TAREAS/TASKS: Design, modelling,...


  • Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: Advanced packaging of GaN-based HEMTs Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and hig Master  Idiomas TAREAS/TASKS: Design, modelling,...


  • Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: Advanced packaging of GaN-based HEMTs Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and hig Master  Idiomas TAREAS/TASKS: Design,...


  • Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: Advanced packaging of GaN-based HEMTs Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and higMasterIdiomasTAREAS/TASKS:Design, modelling, and...


  • Madrid, Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: Advanced packaging of GaN-based HEMTs Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and hig Master Idiomas TAREAS/TASKS:Design, modelling, and...


  • Madrid, Madrid, España Universidad Politécnica de Madrid Employees, Location, Alumni A tiempo completo

    Puesto: Advanced packaging of GaN-based HEMTs Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and higMasterIdiomasTAREAS/TASKS:Design, modelling, and...


  • Madrid, España UNIVERSIDAD POLITÉCNICA DE MADRID A tiempo completo

    Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and hig - Empresa: UNIVERSIDAD POLITÉCNICA DE MADRID - Nº de Plazas: 1 - Referencia: HRS2024/186 -...


  • Madrid, España Universidad Politécnica De Madrid A tiempo completo

    Función: Design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based HEMTs: Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and hig- Empresa: UNIVERSIDAD POLITÉCNICA DE MADRID- Nº de Plazas: 1- Referencia: HRS2024/186-...


  • Madrid, España UNIVERSIDAD POLITÉCNICA DE MADRID A tiempo completo

    Función: Integration of 2D materials with GaN-based high-electron mobility transistors (HEMTs) for advanced ICTs - Empresa: UNIVERSIDAD POLITÉCNICA DE MADRID - Nº de Plazas: 1 - Referencia: HRS2024/154 - Publicada el 8/4/2024 - Publicada hasta el 19/04/2024 - Tipo de Contrato: Contrato temporal - Dedicación: Jornada completa - Remuneración Bruta...


  • Madrid, España UNIVERSIDAD POLITÉCNICA DE MADRID A tiempo completo

    Función: Integration of 2D materials with GaN-based high-electron mobility transistors (HEMTs) for advanced ICTs - Empresa: UNIVERSIDAD POLITÉCNICA DE MADRID - Nº de Plazas: 1 - Referencia: HRS2024/154 - Publicada el 8/4/2024 - Publicada hasta el 19/04/2024 - Tipo de Contrato: Contrato temporal - Dedicación: Jornada completa - Remuneración Bruta...

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