HRER2026/410 Cleanroom Processs Engineer for GaN-based devices
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- 23:00 (Europe/Madrid) Country Spain Type of Contract Temporary Job Status Full-time Hours Per Week 37,5 Offer Starting Date 7 Oct 2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Fabrication and characterization of GaN-based High Electron Mobility Transistors (HEMTs), supporting the ongoing research efforts on the development of device fabrication and packaging technologies Requirements Research Field Engineering Education Level Master Degree or equivalent Research Field Physics Education Level Master Degree or equivalent Languages ENGLISH Level Excellent Research Field Engineering » Electronic engineeringEngineering » Materials engineeringTechnology » Nanotechnology Years of Research Experience 1
- 4 Skills/QualificationsSpecific Requirements
* Candidates must hold a Master Degree in Electronic/Telecommunication/Materials Engineering or Physics
* Proficiency in English
* Goal‑oriented mindset, creativity, teamwork & communication skills
* Hands‑on experience on cleanroom processing and on material & device characterization
* Immediate start Additional Information
* The hired engineer will work in a joint program with INDRA Sistemas S. A., a Spanish multinational company, within the project “Chair UPM-INDRA in Microelectronics”.
* Health and social benefits according to Spanish law. Selection process The contracted researcher will participate in a joint program with INDRA, an international Spanish-based company, within the project “Chair UPM-INDRA in microelectronics”. TSI-069100-2023-0016 Work Location(s) Number of offers available 1 Company/Institute Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) & Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones (CEMDATIC) Country Spain State/Province MADRID City MADRID Postal Code 28040 Street Avenida Complutense, 30 Geofield #J-18808-Ljbffr
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