PhD Position in Operando and In-situ Multimode Characterization of Organic Semiconductors

hace 2 meses


Barcelona, Barcelona, España INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA (ICMAB-CSIC) A tiempo completo
About the Research Project

The field of organic semiconductors has witnessed tremendous growth, offering a promising future for electronic devices with unparalleled versatility and eco-friendliness. Our research focuses on operando and in-situ characterization of organic semiconductor thin films, aiming to grasp the intricacies governing structural order and morphology. This PhD project combines advanced characterization methodologies, including x-ray diffraction, Scanning Probe Force Microscopy, and electrical measurements, to study dynamic changes in material properties during growth or thermal annealing.

Qualifications and Requirements

A strong academic background in materials science, physics, or a related field, a curious and analytical mindset, and the will to learn experimental research are essential for this position. Our group, the Physical Chemistry of Surfaces and Interfaces (PCSI), has expertise in x-ray scattering techniques and advanced scanning probe microscopy, providing an exceptional environment for cutting-edge research.

Benefits

We offer a team-oriented, motivating work atmosphere, allowing the candidate to develop independence and soft and technical skills. Our research platform is integrated within the Barcelona Nanocluster, a research network that includes the UAB, the CSIC, and IRTA, promoting and disseminating nanoscience and nanotechnology.

Further Information
  • Charge-Transfer Complexes in Organic Field-Effect Transistors: Superior Suitability for Surface Doping
  • Design Dependence of the Interface Structure and Crystalline Order of Organic Semiconductor/Dopant Heterojunctions
  • Impact of Nanomorphology on Surface Doping of Organic Semiconductors
  • Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin Film Transistors
  • Decoding the Vertical Phase Separation and its Impact on C8-BTBT:PS Transistor Properties


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